F1022是什么作用： 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1022类似电子元器件：

F1020
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1021
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1022
- 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1027
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1022 PDF资料和参数原理简介

封装形式 :

引脚数量 : 4

温度范围 : 最小 -65 °C | 最大 150 °C

文件大小 : 41 KB

功能应用 : 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor