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F1077是什么作用： 125 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1077类似电子元器件：
- F1070
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
- F1072
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
- F1074
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
- F1076
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
- F1076
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
- F1077
- 125 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1077 PDF资料和参数原理简介
品牌 : Polyfet RF
封装形式 :
引脚数量 : 4
温度范围 : 最小 -65 °C | 最大 150 °C
文件大小 : 41 KB
功能应用 : 125 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1077 PDF资料下载