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LC35V1000BM是什么作用： Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM
LC35V1000BM类似电子元器件：
- LC3517A-10
- 100ns, 2048-word x 8-bit CMOS static RAM (SRAM)
- LC3517A-15
- 150ns, 2048-word x 8-bit CMOS static RAM (SRAM)
- LC3517AL-10
- 100ns, 2048-word x 8-bit CMOS static RAM (SRAM)
- LC3517AL-12
- 120ns, 2048-word x 8-bit CMOS static RAM (SRAM)
- LC3517AL-15
- 150ns, 2048-word x 8-bit CMOS static RAM (SRAM)
- LC3517AM-10
- 100ns, 2048-word x 8-bit CMOS static RAM (SRAM)
- LC3517AM-10
- 100ns, 2048-word x 8-bit CMOS static RAM (SRAM)
- LC3517AM-12
- 120ns, 2048-word x 8-bit CMOS static RAM (SRAM)
LC35V1000BM PDF资料和参数原理简介
品牌 : SANYO
封装形式 :
引脚数量 : 0
温度范围 : 最小 0 °C | 最大 0 °C
文件大小 : 195 KB
功能应用 : Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM
LC35V1000BM PDF资料下载