STH6N100FI类似电子元器件：

STH60N10
- Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
STH60N10FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6NA80FI
- N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS

STH6N100FI PDF资料和参数原理简介

封装形式 :

引脚数量 : 0

温度范围 : 最小 0 °C | 最大 0 °C

文件大小 : 222 KB

功能应用 : N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS