导航：OK电子元器件资料网 > 电子元器件器品牌 > ST Microelectronics Datasheet > VND10N06-1
VND10N06-1是什么作用： OMNIFET FULLY AUTOPROTECTED POWER MOSFET
VND10N06-1类似电子元器件：
- VND10B
- DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY
- VND10BSP
- DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY
- VND10BSP13TR
- DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY
- VND10BSP13TR
- DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY
- VND10N06
- OMNIFET FULLY AUTOPROTECTED POWER MOSFET
- VND10N06-1
- OMNIFET FULLY AUTOPROTECTED POWER MOSFET
- VND14NV04
- "OMNIFET II" FULLY AUTOPROTECTED POWER MOSFET
- VND14NV04-1
- "OMNIFET II" FULLY AUTOPROTECTED POWER MOSFET
VND10N06-1 PDF资料和参数原理简介
品牌 : ST Microelectronics
封装形式 :
引脚数量 : 0
温度范围 : 最小 0 °C | 最大 0 °C
文件大小 : 184 KB
功能应用 : OMNIFET FULLY AUTOPROTECTED POWER MOSFET
VND10N06-1 PDF资料下载