1N5357B类似电子元器件:

  • 1N5348B
    • 11 V, 5 A, 5 W, glass passivated junction silicon zener diode
  • 1N5350B
    • 13 V, 1 A, 5 W, glass passivated junction silicon zener diode
  • 1N5352B
    • 15 V, 1 A, 5 W, glass passivated junction silicon zener diode
  • 1N5353B
    • 16 V, 1 A, 5 W, glass passivated junction silicon zener diode
  • 1N5354B
    • 17 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
  • 1N5355B
    • 18 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
  • 1N5356B
    • 19 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
  • 1N5357B
    • 20 V, 0.5 A, 5 W, glass passivated junction silicon zener diode

1N5357B PDF资料和参数原理简介

品牌 : Transys Electronics 

封装形式 : DO-201AE 

引脚数量 : 2 

温度范围 : 最小 -55 °C | 最大 150 °C

文件大小 : 293 KB

功能应用 : 20 V, 0.5 A, 5 W, glass passivated junction silicon zener diode 

1N5357B PDF资料下载