28LV64SI-3是什么作用： Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.

28LV64SI-3类似电子元器件：

28LV256PC-3
- Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
28LV64TM-3
- Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
28LV256SI-3
- Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
28LV64JM-5
- Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns.
28LV64TI-6
- Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.
28LV256TM-4
- Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
28LV256SM-6
- Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
28LV256PI-5
- Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.

28LV64SI-3 PDF资料和参数原理简介

品牌 : Turbo IC

封装形式 : SOIC

引脚数量 : 28

温度范围 : 最小 -40 °C | 最大 85 °C

文件大小 : 46 KB

功能应用 : Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.