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5962P9960704TXX是什么作用： 512K x 8 SRAM SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si)
5962P9960704TXX类似电子元器件：
- 5962-9652801VCX
- RadHard MSI SMD. Triple 3-input NOR gates. Class V, QML. Lead finish optional. Total dose none.
- 5962-9652701QXA
- "RadHard MSI SMD. Dual 4-input NAND gates. Class Q, QML. Lead finish solder. Total dose none."
- 5962-9658101QXC
- "RadHard MSI SMD. Quadruple S-R latches. Class Q, QML. Lead finish gold. Total dose none."
- 5962R9855202QXX
- RadHard microcontroller SMD. 16 MHz operating frequency. Class Q. Lead finish optional. Total dose 1E5 rads(Si).
- 5962R9322603QZA
- "Monolithic transceiver, 5V operation SMD. Device type idle low. Class Q. Lead finish solder. Total dose 1E5 rads(Si)."
- 5962R9659401VRC
- "RadHard MSI SMD. Octal driver, w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si)."
- 5962F9322604VZX
- "Monolithic transceiver, 5V operation SMD. Device type 1760, idle low. Class V. Lead finish optional. Total dose 3E5 rads(Si)."
- 5962R9652301VCX
- "RadHard MSI SMD. Triple 3-input AND gates. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si)."
5962P9960704TXX PDF资料和参数原理简介
品牌 : UTMC
封装形式 : Flatpack shielded
引脚数量 : 36
温度范围 : 最小 -40 °C | 最大 125 °C
文件大小 : 139 KB
功能应用 : 512K x 8 SRAM SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si)
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