5962R-TBD01VTBDX是什么作用： 256K x 16 SRAM SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si).

5962R-TBD01VTBDX类似电子元器件：

5962-9652801VCX
- RadHard MSI SMD. Triple 3-input NOR gates. Class V, QML. Lead finish optional. Total dose none.
5962-9652701QXA
- "RadHard MSI SMD. Dual 4-input NAND gates. Class Q, QML. Lead finish solder. Total dose none."
5962-9658101QXC
- "RadHard MSI SMD. Quadruple S-R latches. Class Q, QML. Lead finish gold. Total dose none."
5962R9855202QXX
- RadHard microcontroller SMD. 16 MHz operating frequency. Class Q. Lead finish optional. Total dose 1E5 rads(Si).
5962R9322603QZA
- "Monolithic transceiver, 5V operation SMD. Device type idle low. Class Q. Lead finish solder. Total dose 1E5 rads(Si)."
5962R9659401VRC
- "RadHard MSI SMD. Octal driver, w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si)."
5962F9322604VZX
- "Monolithic transceiver, 5V operation SMD. Device type 1760, idle low. Class V. Lead finish optional. Total dose 3E5 rads(Si)."
5962R9652301VCX
- "RadHard MSI SMD. Triple 3-input AND gates. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si)."

5962R-TBD01VTBDX PDF资料和参数原理简介

品牌 : UTMC

封装形式 : TBD

引脚数量 : 48

温度范围 : 最小 -55 °C | 最大 125 °C

文件大小 : 103 KB

功能应用 : 256K x 16 SRAM SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si).