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MJE3055T是什么作用： NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.
MJE3055T类似电子元器件：
- MJE3055T
- NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.
MJE3055T PDF资料和参数原理简介
品牌 : Usha
封装形式 : TO-220
引脚数量 : 3
温度范围 : 最小 -65 °C | 最大 150 °C
文件大小 : 52 KB
功能应用 : NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.
MJE3055T PDF资料下载