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BUT11是什么作用： NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
BUT11类似电子元器件：
- BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
- BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
- BUT11A
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
- BUT11AF
- NPN silicon diffused power transistor. For switching power circuits
- BUT12
- NPN silicon diffused power transistor. For switching power circuits
- BUT12A
- NPN silicon diffused power transistor. For switching power circuits
- BUT12AF
- NPN silicon diffused power transistor. For switching power circuits
BUT11 PDF资料和参数原理简介
品牌 : WingShing
封装形式 : TO-220
引脚数量 : 3
温度范围 : 最小 0 °C | 最大 0 °C
文件大小 : 24 KB
功能应用 : NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
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