IRG4PSH71KD是什么作用： Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.97V @ VGE = 15V, IC = 42A

IRG4PSH71KD类似电子元器件：

IRG4BC10K
- Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
IRG4BC10KD
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- Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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IRG4PSH71KD PDF资料和参数原理简介

品牌 : IR

封装形式 : SUPER-247

引脚数量 : 3

温度范围 : 最小 -55 °C | 最大 150 °C

文件大小 : 219 KB

功能应用 : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.97V @ VGE = 15V, IC = 42A