VTE1163是什么作用： GaAlAs infrared emitting diode. Irradiance(typ) 28 mW/cm2 at distance 36 mm, diameter 6.4 mm.

VTE1163类似电子元器件：

VTE1063
- GaAlAs infrared emitting diode. Irradiance(typ) 5.0 mW/cm2 at distance 36 mm, diameter 6.4 mm.
VTE1113
- GaAs infrared emitting diode. Irradiance(typ) 15 mW/cm2 at distance 36 mm, diameter 6.4 mm.
VTE1163
- GaAlAs infrared emitting diode. Irradiance(typ) 28 mW/cm2 at distance 36 mm, diameter 6.4 mm.
VTE1261
- GaAlAs infrared emitting diode. Irradiance(typ) 3.9 mW/cm2 (distance 36 mm, diameter 6.4 mm).
VTE1262
- GaAlAs infrared emitting diode. Irradiance(typ) 5.2 mW/cm2 (distance 36 mm, diameter 6.4 mm).
VTE1281-1
- GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm).
VTE1281-2
- GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm).
VTE1281F
- GaAlAs infrared emitting diode. Irradiance(typ) 0.21 mW/cm2 (distance 36 mm, diameter 6.4 mm).

VTE1163 PDF资料和参数原理简介

封装形式 : TO-46

引脚数量 : 2

温度范围 : 最小 -55 °C | 最大 125 °C

文件大小 : 30 KB

功能应用 : GaAlAs infrared emitting diode. Irradiance(typ) 28 mW/cm2 at distance 36 mm, diameter 6.4 mm.