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VTE1281F是什么作用： GaAlAs infrared emitting diode. Irradiance(typ) 0.21 mW/cm2 (distance 36 mm, diameter 6.4 mm).
VTE1281F类似电子元器件：
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- GaAlAs infrared emitting diode. Irradiance(typ) 5.0 mW/cm2 at distance 36 mm, diameter 6.4 mm.
- VTE1113
- GaAs infrared emitting diode. Irradiance(typ) 15 mW/cm2 at distance 36 mm, diameter 6.4 mm.
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- GaAlAs infrared emitting diode. Irradiance(typ) 28 mW/cm2 at distance 36 mm, diameter 6.4 mm.
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- GaAlAs infrared emitting diode. Irradiance(typ) 3.9 mW/cm2 (distance 36 mm, diameter 6.4 mm).
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- GaAlAs infrared emitting diode. Irradiance(typ) 5.2 mW/cm2 (distance 36 mm, diameter 6.4 mm).
- VTE1281-1
- GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm).
- VTE1281-2
- GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm).
- VTE1281F
- GaAlAs infrared emitting diode. Irradiance(typ) 0.21 mW/cm2 (distance 36 mm, diameter 6.4 mm).
VTE1281F PDF资料和参数原理简介
品牌 : PerkinElmer
封装形式 : T-1.75
引脚数量 : 2
温度范围 : 最小 -40 °C | 最大 100 °C
文件大小 : 26 KB
功能应用 : GaAlAs infrared emitting diode. Irradiance(typ) 0.21 mW/cm2 (distance 36 mm, diameter 6.4 mm).
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