F1069是什么作用： 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1069类似电子元器件：

F1060
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1063
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1065
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1066
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1069
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1069 PDF资料和参数原理简介

封装形式 :

引脚数量 : 2

温度范围 : 最小 -65 °C | 最大 150 °C

文件大小 : 39 KB

功能应用 : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor