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MJD122-1是什么作用： "NPN darlington transistor for high DC current gain, 100V, 5A"
MJD122-1类似电子元器件：
- MJD112
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD117
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122-1
- "NPN darlington transistor for high DC current gain, 100V, 5A"
- MJD122T4
- NPN darlington transistor for high DC current gain, 100V, 5A
- MJD127-1
- PNP darlington transistor for high DC current gain, 100V, 5A
- MJD127T4
- PNP darlington transistor for high DC current gain, 100V, 5A
MJD122-1 PDF资料和参数原理简介
品牌 : ST Microelectronics
封装形式 : TO-252
引脚数量 : 3
温度范围 : 最小 -65 °C | 最大 150 °C
文件大小 : 100 KB
功能应用 : "NPN darlington transistor for high DC current gain, 100V, 5A"
MJD122-1 PDF资料下载