导航：OK电子元器件资料网 > 电子元器件器品牌 > ST Microelectronics Datasheet > MJD127T4
MJD127T4是什么作用： PNP darlington transistor for high DC current gain, 100V, 5A
MJD127T4类似电子元器件：
- MJD112
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD117
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122-1
- "NPN darlington transistor for high DC current gain, 100V, 5A"
- MJD122T4
- NPN darlington transistor for high DC current gain, 100V, 5A
- MJD127-1
- PNP darlington transistor for high DC current gain, 100V, 5A
- MJD127T4
- PNP darlington transistor for high DC current gain, 100V, 5A
MJD127T4 PDF资料和参数原理简介
品牌 : ST Microelectronics
封装形式 : TO-252
引脚数量 : 3
温度范围 : 最小 -65 °C | 最大 150 °C
文件大小 : 100 KB
功能应用 : PNP darlington transistor for high DC current gain, 100V, 5A
MJD127T4 PDF资料下载