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UT7Q512是什么作用： 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
UT7Q512类似电子元器件：
- UT7Q512
- 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
- UT7Q512
- 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
- UT7Q512K-UCA
- "512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped."
- UT7Q512K-UCA
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped.
- UT7Q512K-UCC
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish gold.
- UT7Q512K-UCX
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option.
- UT7Q512K-UPC
- 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.
- UT7Q512K-UPC
- 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.
UT7Q512 PDF资料和参数原理简介
品牌 : UTMC
封装形式 : FlatPack
引脚数量 : 32
温度范围 : 最小 0 °C | 最大 0 °C
文件大小 : 16 KB
功能应用 : 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
UT7Q512 PDF资料下载