UT7Q512K-UCX是什么作用： 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option.

UT7Q512K-UCX类似电子元器件：

UT7Q512
- 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
UT7Q512
- 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
UT7Q512K-UCA
- "512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped."
UT7Q512K-UCA
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped.
UT7Q512K-UCC
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish gold.
UT7Q512K-UCX
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option.
UT7Q512K-UPC
- 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.
UT7Q512K-UPC
- 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.

UT7Q512K-UCX PDF资料和参数原理简介

品牌 : UTMC

封装形式 : Ceramic flatpack

引脚数量 : 32

温度范围 : 最小 -55 °C | 最大 125 °C

文件大小 : 117 KB

功能应用 : 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option.