WMBT3904是什么作用： NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A

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WMBT3904 PDF资料和参数原理简介

封装形式 : SOT-89

引脚数量 : 3

温度范围 : 最小 0 °C | 最大 0 °C

文件大小 : 72 KB

功能应用 : NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A