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WMBT3906是什么作用： PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
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WMBT3906 PDF资料和参数原理简介
品牌 : WingShing
封装形式 : SOT-89
引脚数量 : 3
温度范围 : 最小 0 °C | 最大 0 °C
文件大小 : 72 KB
功能应用 : PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
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