WMBT5551LT1是什么作用： NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V

WMBT5551LT1类似电子元器件：

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WMBT5551LT1
- NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V
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WMBT5551LT1 PDF资料和参数原理简介

封装形式 : SOT-23

引脚数量 : 3

温度范围 : 最小 0 °C | 最大 0 °C

文件大小 : 39 KB

功能应用 : NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V